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Development of Wide Band Gap P-a-SiOxCy:H Using Additional Trimethylboron as Carbon Source Gas
강동원,Porponth Sichanugrist,Bancha Janthong,Muhammad Ajmal Khan,Chisato Niikura,Makoto Konagai 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.4
We report p-type a-SiOxCy:H thin films which were fabricated byintroducing additional Trimethylboron (TMB, B(CH3)3) dopinggas into conventional standard p-type a-SiOx:H films. The TMBaddition into the condition of p-a-SiOx:H improved opticalbandgap from 2.14 to 2.20 eV without deterioration of electricalconductivity, which is promising for p-type window layer of thinfilm solar cells. The suggested p-a-SiOxCy:H films were appliedin amorphous silicon solar cells and we found an increase ofquantum efficiency at short wavelength regions due to widebandgap of the new p-layer, and thus efficiency improvementfrom 10.4 to 10.7% was demonstrated in a-Si:H solar cell byemploying the p-a-SiOxCy:H film. In case of a-SiOx:H cell, highopen circuit voltage of 1.01 V was confirmed by using thesuggested the p-a-SiOxCy:H film as a window layer. This new playercan be highly promising as a wide bandgap window layer toimprove the performance of thin film silicon solar cells.