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      저자 : Chia-Jeng Chian (검색결과 1 건)
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        Channel-Composition-Dependent Characteristics of -Doped InxAl1-xAs/InyGa1-yAs Metamorphic High Electron Mobility Transistors

        Ching-Sung Lee,Chia-Jeng Chian,Wei-Chou Hsu,Ke-Hua Su,Su-Jen Yu 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.4

        This work provides comprehensive comparisons of the device characteristics, including the voltage gain, power performance, linearity and noise characteristics, for InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors with respect to different indium contents in the InGaAs channel. Though the device with a high In-ratio InGaAs channel usually demonstrated improved high-frequency characteristics, the kink effects in their narrow-gap channel materials were found to seriously degrade the device performance. On the other hand, the low In-ratio channel device had characteristics advantageous for high-gain and high-linearity applications while the device with a compromised channel composition design was suitable for high-power circuit applications. This work provides comprehensive comparisons of the device characteristics, including the voltage gain, power performance, linearity and noise characteristics, for InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors with respect to different indium contents in the InGaAs channel. Though the device with a high In-ratio InGaAs channel usually demonstrated improved high-frequency characteristics, the kink effects in their narrow-gap channel materials were found to seriously degrade the device performance. On the other hand, the low In-ratio channel device had characteristics advantageous for high-gain and high-linearity applications while the device with a compromised channel composition design was suitable for high-power circuit applications.

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