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Chi-Lang Nguyen,Nguyen Hong Quan,Binh Tinh Tran,Yung-Hsuan Su,Shih-Hsuan Tang,Guang-Li Luo,Edward Yi Chang 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.4
High crystal quality, smooth surface and fully relaxed Ge1-xSix (0.05 ≤ x ≤ 0.1) buffers are grown on 6°-off (100) Si substrate by UHV-CVD. A low-temperature (LT) Ge seed layer is used to improve the quality of the Ge1-xSix buffers. In this study, the LT-Ge seed layer is deposited directly onto the Si substrate at a low temperature of 315°C. After that, stress-free Si0.1Ge0.9 and Si0.05Ge0.95 layers are grown, respectively. An in-situ annealing process is also performed for the Si0.1Ge0.9/LT-Ge layers to increase the degree of relaxation. The total thickness of the epitaxial layer is 270 nm, with the average surface roughness at 0.6 nm.
Quantitative Trait Loci Associated with Heat Tolerance in Rice (Oryza sativa L.)
( Bui Chi Buu ),( Pham Thi Thu Ha ),( Bui Phuoc Tam ),( Tran Thi Nhien ),( Nguyen Van Hieu ),( Nguyen Trong Phuoc ),( Luong The Minh ),( Ly Hau Giang ),( Nguyen Thi Lang ) 한국육종학회 2014 Plant Breeding and Biotechnology Vol.2 No.1
A total of 310 BC2F2 lines derived from the cross of OM5930/N22 were evaluated for heat stress at flowering. Genetic map was set up with 264 polymorphic SSRs to detect linkage to the target traits. The map covers 2,741.63 cM with an average interval of 10.55 cM between two marker loci. Markers associated with heat tolerance were located mostly on chromosomes 3, 4, 6, 8, 10 and 11. The proportion of phenotypic variation explained by each QTL ranged from 17.1% for RM160 to 36.2% for RM3586. Four QTLs were detected for filled grains per panicle on chromosome 4 at the interval of RM468 - RM7076 and RM241 - RM26212, explaining 13.1 and 31.0% of the total phenotypic variation, respectively. Two QTLs controling unfilled grain percentage was also detected at loci RM554 and RM3686 on chromosome 3 explaining 25.0 and 11.2% of the total phenotypic variance. One QTL was detected for 1,000-grain weight located at the locus RM103 on chromosome 6, explaining 30.6% of the total phenotypic variance. Also, a QTL at the locus RM5749 on chromosome 4 was identified which explained 10.8% of the total phenotypic variance of grain yield. A single QTL at the interval of RM3586- RM160 on chromosome 3 was detected in conformity with the QTL findings for heat tolerance in previous studies.
Breeding for Heat Tolerance Rice Based on Marker-Assisted Backcrosing in Vietnam
Nguyen Thi Lang,Pham Thi Thu Ha,Pham Cong Tru,Tran Bao Toan,Bui Chi Buu,조영찬 한국육종학회 2015 Plant Breeding and Biotechnology Vol.3 No.3
A total of six markers RM3586 and RM160 on chromosome 3 and RM3735, RM3471, RM3687 and RM3536 on chromosome 4 were used to select promising lines in backcrossing populations for heat tolerance at flowering stage in rice. Fifty lines selected in BC3F2, BC4F1, and BC4F2 and parents were planted in 2013, and 2014 dry seasons at the CLRRI field under natural heat stress and greenhouse to evaluate heat tolerance at the reproductive period. Heat tolerance scoring under field condition was based on percentage of unfilled grains. All selected lines exhibited their homozygous alleles with two heat tolerance germplasm N22 or Dular in QTL loci. Twelve lines harboring homozygous alleles to QTL loci RM3586 on chromosome 3 and RM3735 on chromosome 4, respectively were selected and evaluated to agronomic traits and yield potential. Four lines BC4-1-10-1 from OM5930/N22//4 *OM5930, BC4-5-8 from OM5930/Dular//4*OM5930, BC4-5-9-4 from AS996/N22//4*AS996, and BC4-6-3 from AS996/Dular//4 *AS996, respectively were finally selected to would be for regional adaptable test in Central Coast of Vietnam under heat stress condition to release to rice farmers.
Effect of Multiple AlN Layers on Quality of GaN Films Grown on Si Substrates
Binh Tinh Tran,Kung-Liang Lin,Kartika Chandra Sahoo,Chen-Chen Chung,Chi-Lang Nguyen,Edward Yi Chang 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.6
In this paper, we present the effect of multiple thin high-low-high-temperature AlN (HLHT AlN) nucleation layers on GaN film quality. A 1.9-μm-thick GaN film grown on Si (111) substrate shows that the multiple HLHT AlN nucleation layers have a significant effect on GaN film quality. This process also plays a very important role in the growth of GaN films on Si (111) substrates. A high quality GaN film with a uniformly faceted surface with very low dislocation densities is obtained at the optimized multiple HLHT AlN nucleation layers 50-nm thick at a temperature of 1010-800-1010°C and a growth pressure of 50 Torr.