http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Current Saturation and Small Signal Characteristics of Non-Self Aligned GaAs MESFET
Chhokra,Sunita A.,Gupta,R. S. 대한전자공학회 1997 ICVC : International Conference on VLSI and CAD Vol.5 No.1
An analytical model applicable at high drain voltage is described which yields simple equations for small-signal equivalent circuit elements describing the microwave performance of GaAs MESFET. Use is made of Gauss's law to obtain charge in the space charge region categorically divided as Region I, II and III. Inherent effect of surface depletion layer between the ohmic contact and the gated region very well explains the transconductance compression in submicrometer gate length devices. The non-physical v-E expression leading to velocity saturation gives simplified expressions for input (C_(gs)) and feedback (C_(gd)) capacitances.