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RISS 인기검색어
- 검색키워드
- 저자 : Chenet, Daniel A (검색결과 2 건)
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Zhang, Xian,Sun, Dezheng,Li, Yilei,Lee, Gwan-Hyoung,Cui, Xu,Chenet, Daniel,You, Yumeng,Heinz, Tony F.,Hone, James C. American Chemical Society 2015 ACS APPLIED MATERIALS & INTERFACES Vol.7 No.46
<P>Atomically thin materials such as graphene and semiconducting transition metal dichalcogenides (TMDCs) have attracted extensive interest in recent years, motivating investigation into multiple properties. In this work, we demonstrate a refined version of the optothermal Raman technique1,2 to measure the thermal transport properties of two TMDC materials, MoS<SUB>2</SUB> and MoSe<SUB>2</SUB>, in single-layer (1L) and bilayer (2L) forms. This new version incorporates two crucial improvements over previous implementations. First, we utilize more direct measurements of the optical absorption of the suspended samples under study and find values ∼40% lower than previously assumed. Second, by comparing the response of fully supported and suspended samples using different laser spot sizes, we are able to independently measure the interfacial thermal conductance to the substrate and the lateral thermal conductivity of the supported and suspended materials. The approach is validated by examining the response of a suspended film illuminated in different radial positions. For 1L MoS<SUB>2</SUB> and MoSe<SUB>2</SUB>, the room-temperature thermal conductivities are 84 ± 17 and 59 ± 18 W/(m·K), respectively. For 2L MoS<SUB>2</SUB> and MoSe<SUB>2</SUB>, we obtain values of 77 ± 25 W and 42 ± 13 W/(m·K). Crucially, the interfacial thermal conductance is found to be of order 0.1–1 MW/m<SUP>2</SUP> K, substantially smaller than previously assumed, a finding that has important implications for design and modeling of electronic devices.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2015/aamick.2015.7.issue-46/acsami.5b08580/production/images/medium/am-2015-085805_0004.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/am5b08580'>ACS Electronic Supporting Info</A></P>
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Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.
Cui, Xu,Lee, Gwan-Hyoung,Kim, Young Duck,Arefe, Ghidewon,Huang, Pinshane Y,Lee, Chul-Ho,Chenet, Daniel A,Zhang, Xian,Wang, Lei,Ye, Fan,Pizzocchero, Filippo,Jessen, Bjarke S,Watanabe, Kenji,Taniguchi, Nature Pub. Group 2015 Nature nanotechnology Vol.10 No.6
<P>Atomically thin two-dimensional semiconductors such as MoS2 hold great promise for electrical, optical and mechanical devices and display novel physical phenomena. However, the electron mobility of mono- and few-layer MoS2 has so far been substantially below theoretically predicted limits, which has hampered efforts to observe its intrinsic quantum transport behaviours. Potential sources of disorder and scattering include defects such as sulphur vacancies in the MoS2 itself as well as extrinsic sources such as charged impurities and remote optical phonons from oxide dielectrics. To reduce extrinsic scattering, we have developed here a van der Waals heterostructure device platform where MoS2 layers are fully encapsulated within hexagonal boron nitride and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. Magneto-transport measurements show dramatic improvements in performance, including a record-high Hall mobility reaching 34,000???cm(2)???V(-1)???s(-1) for six-layer MoS2 at low temperature, confirming that low-temperature performance in previous studies was limited by extrinsic interfacial impurities rather than bulk defects in the MoS2. We also observed Shubnikov-de Haas oscillations in high-mobility monolayer and few-layer MoS2. Modelling of potential scattering sources and quantum lifetime analysis indicate that a combination of short-range and long-range interfacial scattering limits the low-temperature mobility of MoS2.</P>
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