http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Nath Deena,Chakravarty Sujay,Deshpade U.P.,Arasu A.V. Thanikai,Baskaran R.,Shekar N.V. Chandra 한국물리학회 2022 Current Applied Physics Vol.34 No.-
In this work for the first time, we are reporting the unusual observation of the Kondo effect with the coexistence of room temperature ferromagnetism in AlN/Al/AlN trilayer thin film. The grown film shows resistivity minimum at a temperature of ~48K, which shifts to the lower temperature on the application of magnetic fields. After considering various possibilities for an upturn in resistivity, we found that the Kondo scattering is responsible for upturn at low temperature. The simultaneous presence of ferromagnetism and Kondo scattering is explained by spatial variation of nitrogen vacancy defects from the film surface to the Al sandwich layer. Furthermore, magneto-transport properties of the film measured at different temperature exhibits both negative and positive components described by localized magnetic moment model for the spin scattering of carriers and two-band model, respectively. This work provides insight into the novel co-existence of ferromagnetism and Kondo effect in crystalline AlN.