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Group III-nitride radial heterojunction nanowire light emitters
Michael A. Mastro,Josh Caldwell,Mark Twigg,Blake Simpkins,Orest Glembocki,Ron T. Holm,Charles R. Eddy, Jr.,Fritz Kub,김홍렬,Jaehui Ahn,김지현 한양대학교 세라믹연구소 2008 Journal of Ceramic Processing Research Vol.9 No.6
Heterojunction nanowires were fabricated via a vapor-liquid-solid growth mechanism in a metal organic chemical vapor deposition system. The structure consisted of a n-type GaN:Si core surrounding by a distinct p-type AlGaN:Mg shell. Transmission electron microscopy revealed that the nanowires were free of extended defects. Photoluminescence measured a strong UV emission peak. Additionally, sources of mid-gap transitions are linked to surface states on the nanowire surface.