http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Components-dependent magnetic switching of CoFeB and CoFeSiB magnetic tunnel junction
T. X. Wang,D. K. Kim,B. S. Chuna,Y. K. Kima 한국자기학회 2007 한국자기학회 학술연구발표회 논문개요집 Vol.- No.-
Two kinds of amorphous Co-rich magnetic amorphous films of CoFeB and CoFeSiB of different compositions were prepared by magnetron sputtering and applied as ferromagnetic electrodes in magnetic tunnel junctions (MTJs). The spin polarization of CoFeB is rather sensitive to its composition, but not necessarily to magnetic switching behavior. The switching fields were around 30 Oe for Co contents ranging from 60 to 85 at. %). On the contrary, the switching behavior of CoFeSiB was very sensitive to its Co content (5 to 20 Oe as Co content increased from 71 to 81 at. %), with tunneling magneto-resistance (TMR) ratio saturated when Co surpass 74 at. %. Comparatively, CoFeSiB can be a good candidate for future high density spin memory devices to reduce the switching field or critical current with its excellent adjustable soft magnetic behavior and high spin polarization by properly adjust the contents of metalloid elements Si and B. The Landau-Lifshitz-Gilbert micromagnetics simulation was employed to investigate the size dependenceof MTJs with magnetically soft CoFeSiB free layer with ellipsoidal cells with sizes from 1 μm to 60 nm, using the magnetic parameters extracted from the experiment. The switching field needed was smaller compared to that of the Co [1] and CoFe [2] junctions but slightly larger than that of the NiFe [3] junction at corresponding sizes reported. Above-mentioned features associated with amorphous CoFeSiB junction appear attractive for MRAM applications.