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- 저자 : Arun Barvat (검색결과 2 건)
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Arun Barvat,Nisha Prakash,Gaurav Kumar,Dilip K. Singh,Anjana Dogra,Suraj P. Khanna,Prabir Pal 한국물리학회 2018 Current Applied Physics Vol.18 No.2
We report the electronic structure of Molybdenum disulfide (MoS2) ultrathin 2D films grown by pulsed laser deposition (PLD) on top of GaN/c-Al2O3 (0001) substrates annealed up to 550 C in an ultrahigh vacuum. Our X-ray photoemission spectroscopy (XPS) study shows that the grown films are mixed phase character with semiconducting 2H and metallic 1T phases. After ultrahigh vacuum (UHV) annealing, the 1T/2H phase ratio is significantly modified and film-substrate bonding becomes the leading factor influencing variation of mixed phase compositions. The semiconducting phase is partially transformed to metallic phase by thermal annealing; suggesting that the metallic phase observed here may indeed have more stability compared to the semiconducting phase. The notable enhancement of the 1T/2H ratio induces significant changes in Ga 3d core level spectra taken from bare GaN and MoS2/GaN sample. The impact of S and/or Mo atoms on the Ga core level spectra is further pronounced with the thermal annealing of grown films. The analysis shows that an enhancement of 1T metallic phase with thermal annealing in MoS2 layers is manifested by the occurrence of new spectral component in the Ga 3d core level spectra with the formation of Ga-S adlayer interaction through the Ga bonding in defect assisted GaN structure.
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Preetam Singh,K.M.K. Srivatsa,Arun Barvat,Prabir Pal 한국물리학회 2016 Current Applied Physics Vol.16 No.10
The oxidation states of CeO2 films, deposited on biaxially textured Ni-W(100), c-Al2O3(0001) and Si(100) substrates, were investigated by using X-ray photoelectron spectroscopy (XPS). The CeO2 films were deposited by RF magnetron sputtering under same deposition conditions. X-ray diffraction (XRD) studies of the films revealed that preferred (200) orientation of CeO2 was observed in case of Ni-W substrate while (111) orientation on Al2O3 and Si substrates. The O1s and Ce3d spectra reveal that the films mostly consist of Ce4þ oxidation states with ~72.6%, 74.7% and 74.9% on Ni-W, Al2O3 and Si substrates, respectively. The less Ce4þ content in case of Ni-W substrate has been attributed to the migration of oxygen atoms from film to the metallic substrate. The decrease of O2p states in the valence band spectra also in support with the presence of more oxygen vacancies in CeO2/Ni-W compared to that in other substrates. Further, the position of valance band maxima is almost identical (~2.6 eV) for all the deposited films indicating that all films are n-type in nature.
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