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Anemone, Gloria,Climent-Pascual, Esteban,Al Taleb, Amjad,Yu, Hak Ki,Jimé,nez-Villacorta, Felix,Prieto, Carlos,Wodtke, Alec M.,De André,s, Alicia,Farí,as, Daniel Elsevier 2018 Carbon Vol.139 No.-
<P><B>Abstract</B></P> <P>Chemical vapor deposition (CVD) is one of the best ways to scalably grow low cost, high quality graphene on metal substrates; unfortunately, it not ideal for producing graphene on dielectric substrates. Here, we demontrate production of a high quality graphene layer on Sapphire using CVD with a copper catalyst. The catalyst consists of a thin copper film grown epitaxially on <I>α</I>- <SUB> Al 2 </SUB> <SUB> O 3 </SUB> (0001). After CVD growth of Graphene, the copper can be removed by simple evaporation in the presence of a carbon source ( <SUB> C 2 </SUB> <SUB> H 4 </SUB> ). We characterized the resulting graphene layer using Raman spectroscopy, atomic force microscopy (AFM), optical transmission and helium atom scattering (HAS). The sample exhibited a reduced Raman D peak and an excellent 2D to G ratio. AFM and HAS show large graphene domains over a macroscopic region. We measured > 86 % transparency over the visible spectrum.</P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>