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Prikhodko, O.,Almasov, N.,Korobova, Natalya The Korea Institute of Information and Commucation 2011 Journal of information and communication convergen Vol.9 No.5
The absence of deep traps for electrons in the spectrum of $As_{40}Se_{30}S_30$ localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous $As_{40}Se_{30}S_30$ films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.