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Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors
Manoj Kumar,Burak Tekcan,Ali Kemal Okyay 한국물리학회 2014 Current Applied Physics Vol.14 No.12
A report on GaN based metal insulator semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with atomic layer deposited (ALD) 5-nm-thick HfO2 insulating layer is presented. Very low dark current of 2.24 1011 A and increased photo to dark current contrast ratio was achieved at 10 V. It was found that the dark current was drastically reduced by seven orders of magnitude at 10 V compared to samples without HfO2 insulating layer. The observed decrease in dark current is attributed to the large barrier height which is due to introduction of HfO2 insulating layer and the calculated barrier height was obtained as 0.95 eV. The peak responsivity of HfO2 inserted device was 0.44 mA/W at bias voltage of 15 V.
유현용,Enes Battal,Ali Kemal Okyay,Jaewoo Shim,박진홍,백정우,Krishna C. Saraswat 한국물리학회 2013 Current Applied Physics Vol.13 No.6
We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 x 105 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices.