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유현용,Enes Battal,Ali Kemal Okyay,Jaewoo Shim,박진홍,백정우,Krishna C. Saraswat 한국물리학회 2013 Current Applied Physics Vol.13 No.6
We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 x 105 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices.