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- 저자 : Aftab Afzal (검색결과 5 건)
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Khan, Aftab Ahmad,Khan, Imtiaz Afzal,Siyal, Muhammad Irfan,Lee, Chang-Kyu,Kim, Jong-Oh Elsevier 2019 Environmental research Vol.170 No.-
<P><B>Abstract</B></P> <P>The goal of this study was to prepare a robust anti-wetting and anti-fouling polyethersulfone (PES) membrane for the rejection of a highly saline (NaCl and CaCl<SUB>2</SUB>·2H<SUB>2</SUB>O) feed solution containing humic acid (HA) in direct contact membrane distillation (DCMD). Response surface methodology (RSM) was used to determine the optimum formulation of the used materials. The variable factors selected were polydimethyl siloxane (PDMS) and silica (SiO<SUB>2</SUB>); liquid entry pressure (LEP) and contact angle (CA) were selected as responses. Scanning electron microscopy (SEM) analysis confirmed the SiO<SUB>2</SUB> deposition and Fourier-transform infrared spectroscopy (FTIR) test evidenced the new functional groups i.e., Si–OH, siloxane, and C–F bond vibrations at 3446, 1099 cm<SUP>−1</SUP>, and 1150–1240 cm<SUP>−1</SUP> respectively on the membrane surface. The average roughness (Ra) was increased four times for the coated membranes (0.202–0.242 µm) as compared to that for pristine PES membrane (0.053 µm). The optimum PES-13 membrane exhibited consistent flux of 12 LMH and salt rejection (> 99%) with anti-fouling characteristic in DCMD using the feed solution of 3.5 wt% NaCl + 10 mM CaCl<SUB>2</SUB>·2H<SUB>2</SUB>O + 10 mg L<SUP>−1</SUP> HA. The PES-13 membrane may therefore be a key membrane for application in DCMD against CaCl<SUB>2</SUB>·2H<SUB>2</SUB>O-containing salty solutions with HA.</P> <P><B>Highlights</B></P> <P> <UL> <LI> PES membrane was prepared for application in DCMD using silica nanoparticles. </LI> <LI> Response surface methodology was employed to optimize the coating formulation. </LI> <LI> Modified membranes were resistant to fouling against calcium-humic acid feed. </LI> <LI> The high fluxes for PES-13 membrane were recorded with all three feed solutions. </LI> </UL> </P>
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Dastgeer, Ghulam,Khan, Muhammad Farooq,Nazir, Ghazanfar,Afzal, Amir Muhammad,Aftab, Sikandar,Naqvi, Bilal Abbas,Cha, Janghwan,Min, Kyung-Ah,Jamil, Yasir,Jung, Jongwan,Hong, Suklyun,Eom, Jonghwa American Chemical Society 2018 ACS APPLIED MATERIALS & INTERFACES Vol.10 No.15
<P>Heterostructures comprising two-dimensional (2D) semiconductors fabricated by individual stacking exhibit interesting characteristics owing to their 2D nature and atomically sharp interface. As an emerging 2D material, black phosphorus (BP) nanosheets have drawn much attention because of their small band gap semiconductor characteristics along with high mobility. Stacking structures composed of p-type BP and n-type transition metal dichalcogenides can produce an atomically sharp interface with van der Waals interaction which leads to p-n diode functionality. In this study, for the first time, we fabricated a heterojunction p-n diode composed of BP and WS<SUB>2</SUB>. The rectification effects are examined for monolayer, bilayer, trilayer, and multilayer WS<SUB>2</SUB> flakes in our BP/WS<SUB>2</SUB> van der Waals heterojunction diodes and also verified by density function theory calculations. We report superior functionalities as compared to other van der Waals heterojunction, such as efficient gate-dependent static rectification of 2.6 × 10<SUP>4</SUP>, temperature dependence, thickness dependence of rectification, and ideality factor of the device. The temperature dependence of Zener breakdown voltage and avalanche breakdown voltage were analyzed in the same device. Additionally, superior optoelectronic characteristics such as photoresponsivity of 500 mA/W and external quantum efficiency of 103% are achieved in the BP/WS<SUB>2</SUB> van der Waals p-n diode, which is unprecedented for BP/transition metal dichalcogenides heterostructures. The BP/WS<SUB>2</SUB> van der Waals p-n diodes have a profound potential to fabricate rectifiers, solar cells, and photovoltaic diodes in 2D semiconductor electronics and optoelectronics.</P> [FIG OMISSION]</BR>
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Nazir, Ghazanfar,Rehman, Malik Abdul,Khan, Muhammad Farooq,Dastgeer, Ghulam,Aftab, Sikandar,Afzal, Amir Muhammad,Seo, Yongho,Eom, Jonghwa American Chemical Society 2018 ACS APPLIED MATERIALS & INTERFACES Vol.10 No.38
<P>As one of the newly discovered transition-metal dichalcogenides (TMDs), rhenium disulfide (ReS<SUB>2</SUB>) has been investigated mostly because of its unique characteristics such as the direct band gap nature even in bulk form, which is not prominent in other TMDs (e.g., MoS<SUB>2</SUB>, WSe<SUB>2</SUB>, etc.). However, this material possesses a low mobility and an on/off ratio, which restrict its usage in high-speed and fast switching applications. Low mobilities or on/off ratios can also be caused by substrate scattering as well as environmental effects. In this study, we used few-layer ReS<SUB>2</SUB> (FL-ReS<SUB>2</SUB>) as a channel material to investigate the substrate-dependent mobility, current on/off ratio, Schottky barrier height (SBH), and trap density of states of different dielectric substrates. The hexagonal boron nitride (h-BN)/FL-ReS<SUB>2</SUB>/h-BN structure was observed to exhibit a high mobility of 45 cm<SUP>2</SUP> V<SUP>-1</SUP> s<SUP>-1</SUP>, current on/off ratio of about 10<SUP>7</SUP>, the lowest SBH of about 12 mV at a zero back-gate voltage (<I>V</I><SUB>bg</SUB>), and a low trap density of states of about 5 × 10<SUP>13</SUP> cm<SUP>-3</SUP>. These quantities are reasonably superior compared to the FL-ReS<SUB>2</SUB> devices on SiO<SUB>2</SUB> substrates. We also observed a nearly 5-fold improvement in the photoresponsivity and external quantum efficiency values for the FL-ReS<SUB>2</SUB> devices on h-BN substrates. We believe that the photonic characteristics of TMDs can be improved by using h-BN as the substrate and capping layer.</P> [FIG OMISSION]</BR>
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Firoz Anwar,Rajbala Singh,Gohar Mushtaq,Abdul Rehman Al-Maliki,Abdullah Sabih,F. A. Al-Abbasi,Aftab Ahmad,Muhammad Afzal,Imran Kazm,Ruqaiyah Kha 대한독성 유전단백체 학회 2015 Molecular & cellular toxicology Vol.11 No.3
Hepatocellular carcinoma (HCC) is the fifth and third most common cause of cancer-related deaths. Erythrosine, a commonly used coloring agent in tablet preparation was studied for its role when supplemented with sub necrotic dose of DENA (n-diethyl nitrosamine) to induced HCC in Wistar rats. Single dose of chemical carcinogen DENA with intraperitoneal injection (20 mg/kg) administered before Erythrosine at a dose 0.014 mg/kg by p.o, DENA treated rats and alone. Exposure of DENA and Erythrosine alters the levels of Serum glutamate oxaloacetate transaminase (SGO T), Serum glutamate pyrophosphate transaminase (SGPT), Alkaline phosphate (ALP), Total Bilirubin (TBR), Blood uric acid, urea, lipid profile and Serum alpha-feto protein (AFP) in Wistar rats, with further alteration in intracellular antioxidant enzyme profile Lipid Per oxidation (LPO), Glutathione Peroxidase (GPx), Melanoaldehyde (MDA), Glutathione Reductase (GR), Catalase (CAT), Glutathione (GSH), Glutathione- S-Transferase (GST), Superoxide Dismutase (SOD) along with Vit. C and Vit. E conc.. Moreover Histopathological examinations of the liver tissue showed marked effect of DENA and Erythrosine exposure on liver structure. The results concluded that Erythrosine used as coloring agent for tablet coating as well as food colorant in India, was found to be an inducer as liver proliferating agent and promoter of HCC.
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