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        Improvement of fatigue resistance on La modified BiFeO3 thin films

        A.Z. Simões,L.S. Cavalcante,C.S. Riccardi,J.A. Varela,E. Longo 한국물리학회 2009 Current Applied Physics Vol.9 No.3

        The effect of lanthanum (La) addition in BiFeO3 (BFO) thin films deposited on Pt(111)/Ti/SiO2/Si(100) substrates prepared by soft chemical method was explained. Increasing La concentration promotes changes on structure, microstructure and dielectric/ferroelectric response of films. X-ray diffraction reveals that the films are free of preferred orientations and structural distortion. La addition promotes an increase in dielectric permittivity. The polarization switching and the fatigue behavior of the BFO films were significantly enhanced by the La concentration. The effect of lanthanum (La) addition in BiFeO3 (BFO) thin films deposited on Pt(111)/Ti/SiO2/Si(100) substrates prepared by soft chemical method was explained. Increasing La concentration promotes changes on structure, microstructure and dielectric/ferroelectric response of films. X-ray diffraction reveals that the films are free of preferred orientations and structural distortion. La addition promotes an increase in dielectric permittivity. The polarization switching and the fatigue behavior of the BFO films were significantly enhanced by the La concentration.

      • KCI등재

        Rietveld refinement, microstructure, conductivity and impedance properties of Ba[Zr_0.25Ti_0.75]O_3 ceramic

        T. Badapanda,V. Senthil,S.K. Rout,L.S. Cavalcante,A.Z. Simões,T. P. Sinha,S. Panigrahi,M.M. de Jesus,E. Longo,J.A. Varela 한국물리학회 2011 Current Applied Physics Vol.11 No.6

        In this work, we report the Rietveld refinement, microstructure, conductivity and impedance properties of Ba[Zr_0.25Ti_0.75]O_3 ceramic synthesized by solid state reaction. This ceramic was characterized by X-ray diffraction, Rietveld refinement, scanning electron microscopy and energy dispersive X-ray spectrometry. Impedance spectroscopy analyses reveals a non-Debye relaxation phenomenon being its relaxation frequency moving toward to positive side with increase of temperature. A significant shift in impedance loss peaks toward higher frequency side indicates conduction in material and favoring the long range motion of mobile charge carriers. The frequency dependent ac conductivity at different temperatures indicates that the conduction process is thermally activated. The variation of dc conductivity exhibited a negative temperature coefficient of resistance behavior. The ac conductivity data are used to evaluate the density of states at Fermi level and activation energy of this ceramic. The dc electrical and thermal conductivities of grain and grain boundary have been discussed.

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