http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Raman spectroscopy analysis of structural photoinduced changes in GeS2 + Ga2O3 thin films
A.C. Mendes,L.J.Q. Maia,S.H. Messaddeq,Y. Messaddeq,A.R. Zanatta,M. Siu Li 한국물리학회 2010 Current Applied Physics Vol.10 No.6
Photoexpansion and photobleaching effects have been observed in amorphous GeS2 þ Ga2O3 (GGSO) thin films, when their surfaces were exposed to UV light. The photoinduced changes on the surface of the samples are indications that the structure has been changed as a result of photoexcitation. In this paper,micro-Raman, energy dispersive X-ray analysis (EDX) and backscattering electrons (BSE) microscopy were the techniques used to identify the origin of these effects. Raman spectra revealed that these phenomena are a consequence of the GeeS bonds’ breakdown and the formation of new GeeO bonds,with an increase of the modes associated with GeeOeGe bonds and mixed oxysulphide tetrahedral units (SeGeeO). The chemical composition measured by EDX and BSE microscopy images indicated that the irradiated area is oxygen rich. So, the present paper provides fundamental insights into the influence of the oxygen within the glass matrix on the considered photoinduced effects.