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RISS 인기검색어
- 검색키워드
- 저자 : A. Lusson (검색결과 2 건)
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A. Lusson,N. Haneche,V. Sallet,P. Galtier,V. Munoz-Sanjose,J. Zuniga-Perez,S. Agouram,J. A. Bastos Segura,E. Leroy 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
Zn(1-x)CdxO solid solutions with a composition ranging from pure ZnO up to x = 0.07 have been grown on ZnO substrates by using metalorganic chemical vapor deposition (MO-CVD). The alloy concentration was carefully measured using a Castaing electron microprobe. The measured lateral homogeneity of the alloy was around 0.1 %. Two dierent photoluminescence lines were observed on Zn(1-x)CdxO alloys. At low temperature, a localized exciton line was identied and a second line appeared at higher energy for intermediate temperatures. This eect is interpreted as a delocalization eect of excitons trapped in potential uctuations related to a local alloy disorder. Zn(1-x)CdxO solid solutions with a composition ranging from pure ZnO up to x = 0.07 have been grown on ZnO substrates by using metalorganic chemical vapor deposition (MO-CVD). The alloy concentration was carefully measured using a Castaing electron microprobe. The measured lateral homogeneity of the alloy was around 0.1 %. Two dierent photoluminescence lines were observed on Zn(1-x)CdxO alloys. At low temperature, a localized exciton line was identied and a second line appeared at higher energy for intermediate temperatures. This eect is interpreted as a delocalization eect of excitons trapped in potential uctuations related to a local alloy disorder.
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Some Aspects of the MOCVD Growth of ZnO Nanorods by Using N2O
V. Sallet,F. Falyouni,A. Zeuner,A. Lusson,P. Galtier 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
The MOCVD growth of ZnO one-dimensional structures is investigated. N2O was used as an oxygen source to carry out depositions between 640 ℃ and 780 ℃. Some key growth parameters, such as the precursors nature, the carrier gases nature, or the substrate treatment, were varied in order to observe and understand some evolution in the ZnO film morphology. We found that well-defined arrays of 1D structures were dicult to achieve in the considered range of temperatures, by using DMZn-TEN and N2O as precursors and N2 as a carrier gas. To the contrary, ZnO nanorods and nanotubes were produced under the same conditions when the nitrogen carrier gas was replaced by helium, and ZnO nanoneedles were produced when DEZn was used instead of DMZn-TEN. The morphologies of the ZnO nanostructures were compared between samples grown on as-received (0001) sapphire, annealed (0001) sapphire, (111) silicon or a 150-nm-thick ZnO buffer layer.
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