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SILICON QUANTUM DOTS GROWTH IN SiNx DIELECTRIC: A REVIEW
A. K. PANCHAL,D. K. RAI,M. MATHEW,C. S. SOLANKI 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2009 NANO Vol.4 No.5
This paper reviews research works carried out on silicon quantum dots (Si-QDs) embedded in the silicon nitride (SiNx) dielectric matrix films with different fabrication techniques and different characteristics. The advantages of SiNx as a dielectric compared to silicon dioxide (SiO2) for Si-QDs from a device point of view are discussed. Various fabrication techniques along with different optimized deposition conditions are summarized. The typical results of structural characteristics of the films with Raman spectroscopy and Transmission Electron Microscopy (TEM) are discussed. The origin of photoluminescence (PL) from the films and the chemical compositional analysis such as X-Ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR) and Secondary Ion Mass Spectroscopy (SIMS) analysis of the films are also made available in brief. The charge conduction mechanism in the films with metal–insulator–semiconductor (MIS) structure, with their electrical characterization like capacitance–voltage (C–V) and current–voltage (I–V) measurements are presented.
EXISTENCE OF SOLUTION FOR IMPULSIVE FRACTIONAL DIFFERENTIAL EQUATIONS VIA TOPOLOGICAL DEGREE METHOD
TAGHAREED A. FAREE,SATISH K. PANCHAL 한국산업응용수학회 2021 Journal of the Korean Society for Industrial and A Vol.25 No.1
This paper is studied the existence of a solution for the impulsive Cauchy problem involving the Caputo fractional derivative in Banach space by using topological structures. We based on using topological degree method and fixed point theorem with some suitable conditions. Further, some topological properties for the set of solutions are considered. Finally, an example is presented to demonstrate our results.