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I. C. Robin,C. Tavares,J. Rothman,G. Feuillet,A. H. El-Shaer,A. Bakin,A. Waag,Le Si Dang 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
The structural and the spectroscopic properties of a 2-inch ZnO epilayer grown by using molecular beam epitaxy are investigated. A 500-nm-thick substrate was grown on c-sappire by using a MgO buffer. In spite of the high dislocation density in the epilayer, temperature-dependent photoluminescence measurements show only a small decrease in the luminescence intensity between 4 K and 300 K. Time-resolved photoluminescence measurements reveal a decay time independent of temperature. Cathodoluminescence presents an inhomogeneous emission on a micrometric scale: a stronger emission is measured in small nanometric areas. A tentative explanation of this behavior is proposed.