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Bakin R.I.,Kiselev A.A.,Ilichev E.A.,Shvedov A.M. 한국원자력학회 2022 Nuclear Engineering and Technology Vol.54 No.12
A comprehensive approach for modeling the pulse height spectra of gamma-ray detectors from passing radioactive cloud in a case of accident at NPP has been developed. It involves modeling the transport of radionuclides in the atmosphere using Lagrangian stochastic model, WRF meteorological processor with an ARW core and GFS data to obtain spatial distribution of radionuclides in the air at a given moment of time. Applying representation of the cloud as superposition of elementary sources of gamma radiation the pulse height spectra are calculated based on data on flux density from point isotropic sources and detector response function. The proposed approach allows us to obtain time-dependent spectra for any complex radionuclide composition of the release. The results of modeling the pulse height spectra of the scintillator detector NaI(Tl) Ø63x63 mm for a hypothetical severe accident at a NPP are presented.
I. C. Robin,C. Tavares,J. Rothman,G. Feuillet,A. H. El-Shaer,A. Bakin,A. Waag,Le Si Dang 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
The structural and the spectroscopic properties of a 2-inch ZnO epilayer grown by using molecular beam epitaxy are investigated. A 500-nm-thick substrate was grown on c-sappire by using a MgO buffer. In spite of the high dislocation density in the epilayer, temperature-dependent photoluminescence measurements show only a small decrease in the luminescence intensity between 4 K and 300 K. Time-resolved photoluminescence measurements reveal a decay time independent of temperature. Cathodoluminescence presents an inhomogeneous emission on a micrometric scale: a stronger emission is measured in small nanometric areas. A tentative explanation of this behavior is proposed.
Studies of N-Doped p-ZnO Layers Grown on c-Sapphire by Radical Source Molecular Beam Epitaxy
S. V. Ivanov,A. El-Shaer,M. Al-Suleiman,A. Bakin,A. Waag,O. G. Lyublinskaya,N. M. Shmidt,S. B. Listoshin,R. N. Kyutt,V. V. Ratnikov,A. Ya. Terentyev,B. Ya. Ber,T. A. Komissarova,L. I. Ryabova,D. R. Kh 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
We report on the fabrication of p-type ZnO:N layers using radical-source molecular beam epitaxy and post-growth annealing of the samples. Plasma-activated oxygen and nitrogen fluxes are supplied via a single plasma cell. The combination of low growth temperature (350 − 400 ℃), slightly O-rich conditions, and post-growth annealing in the range of 650 − 800 ℃ results in efficient nitrogen pdoping with Hall hole concentration 3 × 1017 cm−3. The details of the structural and the electrical characterizations of the films are discussed. We report on the fabrication of p-type ZnO:N layers using radical-source molecular beam epitaxy and post-growth annealing of the samples. Plasma-activated oxygen and nitrogen fluxes are supplied via a single plasma cell. The combination of low growth temperature (350 − 400 ℃), slightly O-rich conditions, and post-growth annealing in the range of 650 − 800 ℃ results in efficient nitrogen pdoping with Hall hole concentration 3 × 1017 cm−3. The details of the structural and the electrical characterizations of the films are discussed.
Microscopic Origin of the Near-Band-Edge Emission in Aqueous Chemically-Grown ZnO Nanorods
C. Bekeny,T. Voss,B. Hilker,J. Gutowski,R. Hauschild,H. Kalt,B. Postels,A. Bakin,A. Waag 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
The microscopic origin of the near-band-edge emission in low-temperature aqueous chemicallygrown ZnO nanorods is analyzed. For the as-grown nanorods, a broad and almost featureless main emission band at 3.366 eV is observed due the presence of a high donor and defect density. After the nanorods have been annealed at 800 ℃ for 1 hour in an oxygen atmosphere, a remarkable reduction of the linewidth of the near-band-edge emission from 10 meV to 4 meV is observed. Sharp and distinguishable excitonic transitions are visible. Time-resolved photoluminescence measurements show very fast recombination times of 11 ps for the as-grown sample while the radiative recombination time increases to 80 ps after the sample is annealed in oxygen atmosphere.