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고출력 트랜지스터 패키지 설계를 위한 새로운 와이어 본딩 방식
林鍾植(Jongsik Lim),吳星?(Seongmin Oh),朴天仙(Chunseon Park),李龍鎬(Yongho Lee),安達(Dal Ahn) 대한전기학회 2008 전기학회논문지 Vol.57 No.4
This paper describes the design of high power transistor packages using high power chip transistor dies, chip capacitors and a new wire bonding technique. Input impedance variation and output power performances according to wire inductance and resistance for internal matching are also discussed. A multi crossing type (MCT) wire bonding technique is proposed to replace the conventional stepping stone type (SST) wire bonding technique, and eventually to improve the output power performances of high power transistor packages. Using the proposed MCT wire bonding technique, it is possible to design high power transistor packages with highly improved output power compared to SST even the package size is kept to be the same.