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Harmonic Balance Analysis of MOSFET
라성 김,홍식 민 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.47 No.3
A new quasi-2D MOSFET model which inherently includes lateral eld eects and non-quasistatic (NQS) eects is proposed. Our comprehensive model solves the Poisson and continuity equations in the source and drain regions as well as the channel region by using the harmonic balance method. We can obtain surface potential, carrier density, and depletion depth at source and drain as well as at the channel of the MOSFET device. DC and AC modeling results for long- and short-channel nMOSFETs are compared with the results from a 2D device simulator, NANOCAD.
Gate Conduction Mechanism in Nonvolatile-Dynamic Random Access Memory (NVDRAM) Cell Transistors
정형 이,홍식 민 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.47 No.3
The gate conduction mechanisms in polysilicon-oxide-nitride-oxide-silicon (SONOS) transistors for non-volatile dynamic random access memory (DRAM) having lightly-doped drain (LDD) structure have been investigated by utilizing the threshold voltage shift (Vth) method. It is found that the gate conduction in SONOS transistors is mainly determined by a specific tunneling process depending on the voltage drop (VOX) across the tunnel oxide. It is also shown that the gate conduction mechanism through the ONO dielectric makes a smooth transition from one tunneling process to another according to the relationship between the VOX and tunneling barrier height (B).