http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
유중 용존수소 감지를 위한 Pd/Pt Gate MISFET 센서의 제조와 그 특성
백태성,이재곤,최시영 ( Tae Sung baek,Jae Gon Lee,Sie Yong Choi ) 한국센서학회 1996 센서학회지 Vol.5 No.4
The Pd/Pt gate MISFET type hydrogen sensors, for detecting dissolved hydrogen gas in the transformer oil, were fabricated and their characteristics were investigated. These sensors including diffused resistor heater and temperature monitoring diode were fabricated on the same chip by a conventional silicon process technique. The differential pair plays a role in minimizing the intrinsic voltage drift of the MISFET. To avoid the drift of the sensors induced by the hydrogen, the gate insulators of both FETs were constructed with double layers of silicon dioxide and silicon nitride. In order to eliminate the blister formation on the surface of the hydrogen sensing gate metal, Pt and Pd double metal layers were deposited on the gate insulator. The hydrogen response of the Pd/Pt gate MISFET suggests that the proposed sensor can detect the dissolved hydrogen in transformer oil with 40mV/10ppm of sensitivity and 0.14mV/day of stability.