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증착 후 열처리 온도에 따른 In2O3 박막의 구조적, 전기적, 광학적 특성 변화
이영진 ( Y. J. Lee ),이학민 ( H. M. Lee ),허성보 ( S. B. Heo ),김유성 ( Y. S. Kim ),채주현 ( J. H. Chae ),공영민 ( Y. M. Kong ),김대일 ( Dae Il Kim ) 한국열처리공학회 2011 熱處理工學會誌 Vol.24 No.6
We have investigated the structural, electrical and optical properties of In2 O3 thin films deposited by RF magnetron sputtering and then annealed at 150℃ and 300℃ in vacuum. The structural and electrical properties are strongly related to annealing temperature. All the annealed In2O3 films are grown as a hexagonal wurtzite phase and the largest grain size is observed in the films annealed at 300℃. The sheet resistance decreases with a increase in annealing temperature and In2O3 film annealed at 300℃ shows the lowest sheet resistance of 174 Ω/□. The optical transmittance of In2O3 films in a visible wavelength region also depends on the annealing temperature. The films annealed at 300℃ show higher transmittance of 76% than those of the films prepared in this study. (Received September 27, 2011; Revised October 14, 2011; Accepted October 20, 2011)