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시냅틱 박막 트랜지스터의 동작영역에 따른 가중치 업데이트 특성에 관한 연구
차단영(Danyoung Cha),강연수(Yeonsu Kang),이성식(Sungsik Lee) 대한전자공학회 2023 대한전자공학회 학술대회 Vol.2023 No.6
We present a study with respect to weight updates characteristics dependent on the operating region (i.e. an above-threshold and sub-threshold regimes) in synaptic thin-film transistor (Syn-TFT) with an amorphous semiconducting layers (e.g. In-Ga-Zn-O). To achieve a memory phenomenon of the Syn-TFT, a defective oxide is intentionally used for an electron trapping. With principle of the memory function, the weight of Syn-TFT can be modulated depending on programming pulses, thus weight updates. These weight updates of the Syn-TFT are analyzed in terms of the weight linearity and dynamic ratio for two operating regions. To check this, the electrical and synaptic characteristics of the fabricated Syn-TFT are monitored. In addition, because either the weight linearity or dynamic ratio can affect performances, such as a classification accuracy, of an analog accelerator (AA), the AA simulation is performed with respect to two operating regions, using a crossbar simulator.
Hf-ZnO 박막 트랜지스터의 High-κ 게이트 절연막 구조에 따른 시냅틱 특성에 관한 연구
한상진(Sangjin Han),부서준(Seojun Boo),변석현(Seokhyun Byun),장준영(Junyeong Jang),송동영(Dongyoung Song),차단영(Danyoung Cha),이성식(Sungsik Lee) 대한전자공학회 2024 대한전자공학회 학술대회 Vol.2024 No.6
We show a study on a different structure of a high-k gate insulator stack-dependent synaptic characteristics of a Hafnium doped Zinc Oxide (Hf-ZnO) thin-film transistors (TFTs). These Hf-ZnO TFTs can achieve the memory phenomena (e.g. an electron trapping and de-trapping) by employing a charge-trap layer (CTL). Here, when the number of CTLs is increased, the weight-update characteristics, such as a dynamic ratio, is expected to be improved due to a relatively thinner tunneling oxide (T-Ox) between the CTL and active layer. Regarding the retention process, the double CTL can lead to be a relatively long-term memory through its increased number of T-Ox in comparison with the single CTL. To check these, the static and pulsed characteristics of fabricated Hf-ZnO TFTs are experimentally monitored.
Hf-doped ZnO 박막 트랜지스터의 Hf 도핑 농도에 따른 시냅틱 특성에 관한 연구
송동영(Dongyoung Song),송현우(Hyeonwoo Song),이인호(Inho Lee),피정석(Jeongseok Pi),최지훈(Jihoon Choi),차단영(Danyoung Cha),이성식(Sungsik Lee) 대한전자공학회 2024 대한전자공학회 학술대회 Vol.2024 No.6
We present a study on a weight-update characteristics which is dependent on a Hf doping concentration in a Hf-doped ZnO (Hf-ZnO) channel layer of synaptic thin-film transistors (Syn-TFTs). Here, when Hf doping concentration is increased, it is known that the disorders (e.g. dangling bond) in Hf-ZnO channel layer are suppressed due to an addition of Hf cation. This can be expected that an electron mobility is improved while reducing sub-threshold slope (SS) because of the decreased parasitic capacitance. With the decreased SS, it can be expected that a weightupdate characteristics (e.g. a dynamic ratio, dr<SUB>w</SUB>) is also more improved due to a relatively high sensitivity. To check these, static and pulsed characteristics are monitored with two cases of the fabricated Syn-TFTs, based on a high doped Hf-ZnO (Hf-ZnO(H)) and low doped Hf-ZnO (Hf- ZnO(L)).