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수직형LPE에 의한 InGaAsP(1.3㎛)/InP 다층박막 결정성장
홍창희(Tchang-Hee Hong),조호성(Ho-Sung Chom),오종환(Jong-Hwan Oh),김경식(Kyung-Sik Kim),김재창(Jae-Chang Kim) 한국해양대학교 해사산업연구소 1991 海事産業硏究所論文集 Vol.1 No.-
In this paper the results for thin multi-layer InGaAsP(1.3㎛)/InP crystal growth by vertical liquid epitexial growing furnance have been presented. The growth rates of InGaAsP layer and InP layer at cooling rate of 0.3℃/min and the growing temperature of 630℃ were obtained as 0.11㎛/min and 0.06㎛/min, respectively, by the uniform cooling with two phase solution technique.