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이재종(JaeJong Lee),최기봉(KeeBong Choi),김기홍(GeeHong Kim),이승우(SeungWoo Lee),조현택(HyunTaek Cho) 한국생산제조학회 2006 한국공작기계학회 춘계학술대회논문집 Vol.2006 No.-
Nanoimprint lithography is a promising technology to produce sub-50㎚ half-pitch features on silicon chips. The contact-based nano lithography, such as thermal and/or UV nano-imprint, is well-known as the next generation lithography. Especially, the UV nano-imprint lithography technology has advantages of the simple process, low cost, high replication fidelity, and relatively high throughput(1). To achieve nano-imprinting process, nano-imprinting lithography equipment must have required some multi-functional units which are imprinting head, self-alignment wafer stage, overlay and alignment system for multi-layer process, master with sub-50㎚ half-pitch patterns, and anti-vibration unit, etc.
나노 임프린트 리소그라피에서 동심원 모아레를 이용한 정렬방법
김기홍(Geehong Kim),이재종(Jaejong Lee),최기봉(Keebong Choi),박수연(Sooyeon Park),조현택(Hyuntaek Cho),이종현(Jonghyun Lee) Korean Society for Precision Engineering 2006 한국정밀공학회지 Vol.23 No.11
Nanoimprint lithography is an emerging technology which has an ability to make patterns under 100㎚ width. Recently many researches have been focused to develop multilayer patterning function in nanoimprint lithography and aligning method is attracting attention as a key technology. Moire has been used widely to measure dislocation or deformation of objects and considered one of the best solutions to detect aligning error in nanoimprint lithography. Concentric circular patterns are used to generate a moire fringe in this paper and aligning offset and direction are extracted from it. Especially this paper shows the difference of fringe equation of moire which can be obtained in nanoimprint process atmosphere from normal one.
이재종(JaeJong Lee),최기봉(KeeBong Choi),김기홍(GeeHong Kim),이승우(SeungWoo Lee),조현택(HyunTaek Cho) 한국생산제조학회 2006 한국생산제조시스템학회 학술발표대회 논문집 Vol.2006 No.5
Nanoimprint lithography is a promising technology to produce sub-50㎚ half-pitch features on silicon chips. The contact-based nano lithography, such as thermal and/or UV nano-imprint, is well-known as the next generation lithography. Especially, the UV nano-imprint lithography technology has advantages of the simple process, low cost, high replication fidelity, and relatively high throughput(1). To achieve nano-imprinting process, nano-imprinting lithography equipment must have required some multi-functional units which are imprinting head, self-alignment wafer stage, overlay and alignment system for multi-layer process, master with sub-50㎚ half-pitch patterns, and anti-vibration unit, etc.