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이새훈,조춘래,박영조,고재웅,김해두,Hua-Tay Lin,Paul Becher 한국세라믹학회 2013 한국세라믹학회지 Vol.50 No.3
The densification behavior and strength of sintered reaction bonded silicon nitrides (SRBSN) that contain Lu2O3-SiO2 additives were improved by the addition of fine Si powder. Dense specimens (relative density: 99.5%) were obtained by gas-pressure sintering (GPS) at 1850oC through the addition of fine Si. In contrast, the densification of conventional specimens did not complete at 1950oC. The fine Si decreased the onset temperature of shrinkage and increased the shrinkage rate because the additive helped the compaction of green bodies and induced the formation of fine Si3N4 particles after nitridation and sintering at and above 1600oC. The amount of residual SiO2 within the specimens was not strongly affected by adding fine Si powder because most of the SiO2layer that had formed on the fine Si particles decomposed during nitridation. The maximum strength and fracture toughness of the specimens were 991 MPa and 8.0 MPa·m1/2, respectively.
Lu_2O_3-SiO_2계 소결조제를 포함하는 Silicon Nitride의 소결 특성 및 기계적 거동
이세훈,조춘래,박영조,고재웅,김해두 한국세라믹학회 2011 한국세라믹학회지 Vol.48 No.5
Gas pressure sintering (GPS) of reaction bonded silicon nitride (RBSN) was performed using Lu_2O_3-SiO_2 additive and the properties were compared with those of specimens prepared using high purity Si_3N_4 powder. The relative density of RBSN and compacted Si_3N_4 powder were 68.9 and 47.1%, and total linear shrinkage after sintering at 1900℃ were 14.8 and 42.9%, respectively. High nitrogen partial pressure (5MPa) was required during sintering at 1900℃ in order to prevent the decomposition of the nitride and to promote the formation of SiC. The relative density and 4-point bending strength of RBSN and Si_3N_4 powder compact were 97.7%, 954MPa and 98.2%, 792MPa, respectively, after sintering at 1900℃. The sintered RBSN also showed high fracture toughness of 9.2MPam^(1/2).
Lu<sub>2</sub>O<sub>3</sub>-SiO<sub>2</sub>계 소결조제를 포함하는 Silicon Nitride의 소결 특성 및 기계적 거동
이세훈,조춘래,박영조,고재웅,김해두,Lee, Sea-Hoon,Jo, Chun-Rae,Park, Young-Jo,Ko, Jae-Woong,Kim, Hai-Doo 한국세라믹학회 2011 한국세라믹학회지 Vol.48 No.5
Gas pressure sintering (GPS) of reaction bonded silicon nitride (RBSN) was performed using $Lu_2O_3-SiO_2$ additive and the properties were compared with those of specimens prepared using high purity $Si_3N_4$ powder. The relative density of RBSN and compacted $Si_3N_4$ powder were 68.9 and 47.1%, and total linear shrinkage after sintering at $1900^{\circ}C$ were 14.8 and 42.9%, respectively. High nitrogen partial pressure (5MPa) was required during sintering at $1900^{\circ}C$ in order to prevent the decomposition of the nitride and to promote the formation of SiC. The relative density and 4-point bending strength of RBSN and $Si_3N_4$ powder compact were 97.7%, 954MPa and 98.2%, 792MPa, respectively, after sintering at $1900^{\circ}C$. The sintered RBSN also showed high fracture toughness of 9.2MPam$^{1/2}$.