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노수정(S. J. Noh),이지성(J. S. Lee),조지웅(J. U. Cho),김도균(D. K. Kim),김영근(Y. K. Kim),유양미(Y. M. Yoo),하미영(M. Y. Ha),서주원(J. W. Seo) 한국자기학회 2009 韓國磁氣學會誌 Vol.19 No.1
Among the next generation memory, MRAM (Magnetic Random Access Memory) is worthy of notice for substituting the preexisting memory thanks to its non-volatile property and other advantages. Recently perpendicular MRAM and spin transfer torque MRAM techniques are under active investigation to realize a high density and low power consumption. As a result, there are increasing of patents applications for high density, low current density for magnetization switching and high thermal stability. In this paper, we analyze the trend of patent applications and registrations about MRAM and propose a direction of future investigation.
스핀전달토크형 자기저항메모리(STT-MRAM) 기술개발 동향
김도균(D. K. Kim),조지웅(J. U. Cho),노수정(S. J. Noh),김영근(Y. K. Kim) 한국자기학회 2009 韓國磁氣學會誌 Vol.19 No.1
Reduction of the critical current density (Jc) for STT magnetization switching is most important issue of magnetic tunnel junctions (MTJs) based MRAM. This report describes how to decrease the Jc and will introduce the recent research progresses of STT-MRAM devices with material engineering and structural improvement, respectively.