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Micom IC의 ESD 고장에 의한 전압 shift 한계치 제안
조병준(Byung-Jun Jo),장미순(Mi-Soon Chang),곽계달(Kae-Dal Kwack) 대한기계학회 2009 대한기계학회 춘추학술대회 Vol.2009 No.11
Electrostatic Discharge (ESD) has become one of the most critical reliability issues in integrated circuits. This problem becomes even more crucial when it comes to integrated circuit which deal with high voltage. There is two case of malfunction, one of which is catastrophic failure and the other is latent failure. There are many aspects of ESD failure such as oxide rupture, junction spiking, burn out and filamentation. There are two stress factor about ESD failure which are voltage and current. The form of ESD failure is different from what makes it breakdown. ESD protection circuit is designed to protect from ESD. Diode protection method and using MOS transistor are widely used. This experiment is proceding by MM mode. This study suggests that the limitation of voltage shift on ESD failure, so it is easier to analysis the electrical failure on IC than before.