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열처리공정에 따른 층상 ReSe<sub>2</sub> 디바이스의 접촉 저항 개선 연구
정판검 ( Pan Gum Jung ),이동진 ( Dong Jin Lee ),고필주 ( Pil Ju Ko ) 조선대학교 공학기술연구원 2017 공학기술논문지 Vol.10 No.1
The two-dimensional(2D) materials, including graphene, h-BN, layered transition metal-chalcogenides (TMC) and layered transition metal-dichalcogenides(TMDCs) are the next generation of the opto-electronic devices. In this paper, we report on the opto-electronic properties of back-gated field effect transistor(FET) based on ∼ 200 layered ReSe<sub>2</sub> at before and after annealing. After the annealing, the transition from schottky to ohmic contact in the Ti electrodes and ReSe<sub>2</sub> was observed, and the external quantum efficiency (EQE) of the ReSe<sub>2</sub> device was by increased 10% due to the improvement of the contact resistance between the electrodes and ReSe<sub>2</sub>. We obtained an EQE of 18.8% and 8.2% using 532 nm laser excitation, and ReSe<sub>2</sub> device is a good candidate for 2D material based ultra-thin opto-electronic device applications.