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EFG법을 이용한 (100) β-산화갈륨 단결정 성장 및 라만 특성 연구
신윤지 ( Yun-ji Shin ),조성호 ( Seong-ho Cho ),정운현 ( Woon-hyeon Jeong ),정성민 ( Seong-min Jeong ),이원재 ( Won-jae Lee ),배시영 ( Si-young Bae ) 한국전기전자재료학회 2022 전기전자재료학회논문지 Vol.35 No.6
A 100 mm × 50 mm-sized (100) gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) single crystal ingot was successfully grown by edge-defined film-fed growth (EFG). The preferred orientation and the quality of grown Ga<sub>2</sub>O<sub>3</sub> ingot were compatible with a commercial Ga<sub>2</sub>O<sub>3</sub> substrate by showing strong (100) orientation behaviors and 246 arcsec in X-ray rocking curve. Raman characterization was also performed for both samples; thereby providing various Raman-active characteristics of Ga<sub>2</sub>O<sub>3</sub> crystals. In particular, we observed A<sub>g</sub>(5) and A<sub>g</sub>(10) peaks of Raman active mode, directly related to the impurity of the grown Ga<sub>2</sub>O<sub>3</sub> crystal. Hence, the comparison of the crystal quality and Raman analysis might be useful for further enhancement of Ga<sub>2</sub>O<sub>3</sub> single crystal quality in the future.