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RISS 인기검색어
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- 저자 : 정복만(Bok-Mahn Jung) (검색결과 3 건)
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임태훈(Tae-Hun Lim),정복만(Bok-Mahn Jung),정재훈(Jea-Hoon Jung),최유림(You-Rim Choi),김용하(Yong-Ha Kim) 한국조명·전기설비학회 2019 조명·전기설비학회논문지 Vol.33 No.11
Estimation of interruption costs is indispensable to determine the optimal facility investment scale and optimum reliability level at the time of distribution system planning. For this, in this paper, we calculate interruption costs by microscopic method, which reflects the pattern of power consumption by customers. For continuity with past research results, based on “Assessment of Interruption Costs on the Industry Load through Using the Microscopic Method”[1], we conducted a direct visit survey on five industries that are practically applied in NDIS(New Distribution Information System) of KEPCO: industry, commercial companies, companies and institutions, agricultural fishery products, and houses. We obtained 2,500 valid data and performed Tobit Regression based on this data to calculate domestic interruption costs in and significant data was produced when compared with the results of the interruption costs in 2008 and 2013.
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김용하(Yong-Ha Kim),정복만(Bok-Mahn Jung),이혜선(Hye-Seon Lee),한상화(Sang-Hwa Han),정재훈(Jea-Hoon Jung) 한국조명·전기설비학회 2021 조명·전기설비학회논문지 Vol.35 No.3
The electric power peak - cut effect of gas cooling is defined as the electric power (peak cut) that can be replaced by the gas cooling load accompanying the maximum power generation. In order to measure this, it is necessary to accurately grasp gas consumption, equipment operation rate, and load rate when the maximum load occurs. Past research has difficulty in estimating the cooling gas consumption on peak days, the disadvantage of not reflecting the characteristics of individual gas cooling devices well, and the cooling gas consumption on peak days is estimated from the monthly cooling gas consumption. There was a disadvantage that it was difficult to do. This study solved the existing problems and calculated the avoid cost of reliable gas cooling equipment by considering the electric power peak capacity replacement contribution rate and the electric power amount replacement contribution rate.
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오창균(Chang-Gyun Oh),차윤미(Yun-Mi Cha),이경남(Gyeong-Nam Lee),정복만(Bok-Mahn Jung),김준동(Joondong Kim) 대한전기학회 2018 전기학회논문지 Vol.67 No.10
A heterojunction SnS₂/p-Si photodetector was fabricated by RF magnetron sputtering system. SnS₂ was formed with 2-inch SnS₂ target. Al was applied as the front and the back metal contacts. Rapid thermal process was conducted at 500℃ to enhance the contact quality. 2D material such as SnS₂, MoS₂ is very attractive in various fields such as field effect transistors (FET), photovoltaic fields such as photovoltaic devices, optical sensors and gas sensors. 2D material can play a significant role in the development of high performance sensors, especially due to the advantages of large surface area, nanoscale thickness and easy surface treatment. Especially, SnS₂ has a indirect bandgap in the single and bulk states and its value is 2 eV-2.6 eV which is considerably larger than that of the other 2D material. The large bandgap of SnS₂ offers the advantage for the large on-off current ratio and low leakage current. The SnS₂/p-Si photodetector clearly shows the current rectification when the thickness of SnS₂ is 80 nm compared to when it is 135 nm. The highest photocurrent is 19.73 μA at the wavelength of 740 nm with SnS₂ thickness of 80 nm. The combination of 2D materials with Si may enhance the Si photoelectric device performance with controlling the thickness of 2D layer.
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