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손창완(Chang Wan Son),장성필(Seongphil Chang),이상규(Sanggyu Lee),임재현(Jaehyeon Leem),송용원(Yong-Won Song),이상렬(Sang Yeol Lee) 대한전기학회 2007 대한전기학회 학술대회 논문집 Vol.2007 No.11
In order to form a p-type ZnO thin film, ZnO thin film is eposited by pulsed laser deposition(PLD) on GaAs substrate followed by nermal treatment that ensures the diffusion of As atoms from the GaAs ubstrate to the ZnO thin films. Photoluminescence (PL) measurement eveals that the improved quality of ZnO thin films is acquired at the rowth temperature of 400 ℃. It is ZnO film grown at 100 ℃ that shows the change from n-type to p-type by the thermal treatment. Measured arrier concentration in the film is changed from -5.70 × 10¹³ to 9.09 × 10¹?.