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고전압 Field Stop IGBT의 최적화 설계에 관한 연구
안병섭,장란향,류용,강이구,Ahn, Byoung-Sup,Zhang, Lanxiang,Liu, Yong,Kang, Ey Goo 한국전기전자재료학회 2015 전기전자재료학회논문지 Vol.28 No.8
Power semiconductor device has a very long history among semiconductor, since the invention of low-pressure bipolar transistor 1947, and so far from small capacity to withstand voltage-current, high-speed and high-frequency characteristics have been developed with high function. In this study, the PWM IC Switch to the main parts used in IGBT (insulated gate bipolar transistor) for the low power loss and high drive capability of the simulator to Synopsys' T-CAD used by the 1,700 V NPT Planar IGBT, 1,700 V FS was a study of the Planar IGBT, the results confirmed that IGBT 1,700 V FS Planar is making about 11 percent less than the first designed NPT Planar IGBT.