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상온에서 증착된 IGZO 박막의 열처리 온도에 따른 특성
이석열(Seok-ryeol Lee),이경택(Kyong-taik Lee),김재열(Jae-yeal Kim),양명수(Myoung-su Yang),강인병(In-byeong Kang),이호성(Ho-seong Lee) 한국표면공학회 2014 한국표면공학회지 Vol.47 No.4
We investigated the structural, electrical and optical characteristics of IGZO thin films deposited by a roomtemperature RF reactive magnetron sputtering. The thin films deposited were annealed for 2 hours at various temperatures of 300, 400, 500 and 600℃ and analyzed by using X-ray diffractometer, transmission electron microscopy, atomic force microscope and Hall effects measurement system. The films annealed at 600℃ were found to be crystallized and their surface roughness was decreased from 0.73 nm to 0.67 nm. According to XPS measurements, concentration of oxygen vacancies were decreased at 600℃. Optical band gap were increased to 3.31eV. The carrier concentration and Hall mobility were sharply increased at 600℃. Our results indicate that the IGZO films deposited at a room temperature can show better thin film properties through a heat treatment.