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반도체 표면 물성 측정을 위한 다이아몬드 열전탐침의 설계 및 제작
이병희(Byeonghee Lee),이승구(Seungkoo Lee),김종훈(Jong Hoon Kim),임대순(Dae Soon Lim),권오명(Ohmyoung Kwon),이준식(Joon Sik Lee) 대한기계학회 2009 대한기계학회 춘추학술대회 Vol.2009 No.5
We designed and fabricated a noble diamond thermoelectric probe which can measure the thermoelectric properties on semiconductor surfaces. To measure the thermoelectric property of a semiconductor, not only the temperature but also the thermoelectric voltage at the tip-sample contact should be measured simultaneously. However, previous Scanning Thermal Microscopy (SThM) probes do not ensure the electrical contact with silicon because the native oxide exists on the surface, therefore, the thermoelectric voltage cannot be measured. In order to overcome this limitation, the probe tip is made of B-doped CVD diamond by silicon lost mould technique. And then a gold-diamond thermocouple junction is formed at the tip apex to measure the contact temperature. The size of the thermocouple is about 500 ㎚ and the radius of tip apex is less than 100 ㎚. The probe shows good electrical contacts with the doped silicon surfaces.