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Dielectric properties of PST (20/80)/ PST(80/20) heterolayered thin films
김경태(Kyoung-Tae Kim),김관하(Gwan-Ha Kim),우종창(Jong-Changb Woo),김종규(Jong-Gyu Kim),강찬민(Chan-Min Kang),김창일(Chang-Il Kim) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.10
Dielectric PST (20/80) / PST (80/20) heterolayered thin films structures were created by a consequent deposition of the PST (20/80) and PST (80/20) thin films on the Pt/Ti/SiO₂/Si substrate using alkoxide-based sol-gel method. Both structural and dielectric properties of heterolayered PST thin films were investigated for the tunable microwave device applications. As the number of coating increases, the lattice distortion decreased. It can be assumed that the lower PST layer affects a nucleation site or a seeding layer for the formation of the upper PST layer. The dielectric constant, dielectric loss and tunability of the PST-6 heterolayered structure measured at 100 ㎑ were 399, 0.022 and 57.9%, respectively. All these parameters showed an increase with increasing number of coatings due to the decrease in lattice distortion.