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필드산화막두께에 따른 CMOS 인버터의 전파지연시간에 관한 연구
최갑석,오태엽 明知大學校 産業技術硏究所 1988 産業技術硏究所論文集 Vol.7 No.-
In this paper, the variation of tpd (propagation delay tinge) in tile CMOS inverter is studied by means of controlling tile field oxide thickness of MOS transistor inverter in CMOS inverter fabrication process. From this result, it is confirmed that the field oxide thickness is inversely proportional to the output time constant. In addition, the logic device whose output response speed is high can be slowed by controlling the field oxide thickness ill the current high speed logic circuit fabrication process.