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28 GHz 대역 5G 기지국용 GaN 저잡음 증폭기 MMIC 설계
안현배(Hyun-Bae Ahn),지홍구(Hong-Gu Ji),강동민(Dong-Min Kang),한정환(Jung-Hwan Han) 대한전자공학회 2021 대한전자공학회 학술대회 Vol.2021 No.6
This paper is a study on the design of a low noise amplifier for 5G base station in 28 GHz band using 0.15 um GaN HEMT process. GaN HEMT devices are used as high output power amplification devices because they have a wide energy band gap, high breakdown voltage, high electron saturation rate and high electron mobility. In addition, due to the development of GaN process technology, GaN devices are also used in the design of low-noise amplifiers, which can eliminate the limiter of the receiver, thereby increasing the efficiency in terms of the receiver module size and noise characteristics. The designed GaN low-noise amplifier for 5G base station in the 28 GHz band has the minimum noise figure of 1.6 dB, the gain of 12.9-15.8 dB , the input return loss of > 12 dB, and the output return loss of > 15 dB in the 26-32 GHz band.