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신영두,이진구 동국대학교 산업기술환경대학원 1994 산업기술논총 Vol.2 No.-
This paper describes investigation and analysis of Si wafer find-line processes from 1960's up to present based on U.S. Patent No. 4,941,941 entitled " METHOD OF ANISOTROPICALLY ETCHING SILICON WAFERS AND WAFER ETCHING SOLUTION". This study is intended to classify techniques on wet etchants from chemicals mainly used in the reference above and 9 patents, and also includes reviews on both physical and chemical features of wet etching and, further more, comparative explanation of wet and dry etching. The characteristics of low temperature and low speed, of the wet etching processes and some limitations of the informations, given in U.S. Patent No. 4,941,941 and 9 patents, are mainly investigated and analysed, and, then, the dry etching processes are simply discussed as a substitution for the fin-line Si processes. And, finally, future possible development of other kinds of chemical etchants is suggested.