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n-ITO/p-PSL 이종접합형 광검출 소자의 제조 및 그 특성
김항규,신장규,이종현,송재원 ( Hang Kyoo Kim,Jang Kyoo Shin,Jong Hyun Lee,Jae Won Song ) 한국센서학회 1995 센서학회지 Vol.4 No.1
n-ITO/p-PSL heterojunction photodetector have been fabricated on the Si wafer by using ITO(indium tin oxide) and PSL(porous silicon layer). They were anodized selectively by using silicon nitride and Ni-Cr/Au and were passivated by using ITO as well as being isolated by using mesa structure. With white light from 0 to 3000 Lux, the photocurrent varied linearly with incident light intensity. The reverse characteristics of fabricated devices were very stable up to a bias voltage of -40V and dark current density was about 40nA/㎟. When the device was exposed by Xe lamp whose wavelength range from 400nm to 1100nm, the maximum photo responsivity was about 0.6A/W between 600 and 700nm. Variation of the characteristics of fabricated devices after 5 weeks was negligible.