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3차원 낸드 플래시 채널 홀의 Vertical Profile 개선을 위한 에칭 공정 조건 연구
박상우(Sangwoo Park),송윤흡(Yunheub Song) 대한전자공학회 2020 대한전자공학회 학술대회 Vol.2020 No.8
In this paper, in order to establish the conditions in the etching process even in difficult process problems, after depositing the stacked films Oxide―Poly―Oxide (OPO), E―beam lithography was used to draw the desired pattern and experiment on channel hole etching was performed. ICP power, chuck power, pressure, and gas were controlled using equipment to proceed with the process. Through this, the vertical profile was secured under certain conditions and the etch stop was confirmed using SEM, FIB, and TEM as analytical equipment and conditions were established.
Tungsten 및 molybdenum 게이트를 사용한 3D VNAND flash memory의 mechanical stress 분포 확인
윤동관(DongGwan Yoon),송윤흡(YunHeub Song) 대한전자공학회 2021 대한전자공학회 학술대회 Vol.2021 No.6
해당 논문은 TCAD simulation을 이용해 3D VNAND flash memory gate의 물질을 텅스텐과 몰리브덴으로 제작하여 poly-silicon channel에 영향을 확인하기 위해 channel 수평인 XX 방향stress를 확인했다. 두 물질에서 stress 경향성은nitride와 poly-silicon을 제외하고는 경향성이 일치했으며, CTE가 더 큰 몰리브덴에서 비교적 더 큰 stress 분포가 이루어졌지만 stress의 차이는 작았다. 따라서 몰리브덴을 사용했을 때, poly-silicon channel이 stress에 의한 on-current감소가 발생될 것으로 보이지만 그 크기가 작아 영향이 없을 것으로 예상된다.
MgO 기반의 MTJ에서의 Insulator의 종류와 Pillar Size에 따른 Self-heating 현상 연구
김병관(Byungkwan Kim),안준섭(Junseop An),최철민(Chulmin Choi),송윤흡(Yunheub Song) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.6
We already know Temperature that was made from Self-heating phenomenon effects on memory"s important functions (reading, writing, detection, etc...). Through simulations, we could identify that the temperature was changed by Insulator and Pillar size in MTJ. therefore we could found what insulator and size of pillar occurs lowest temperature.
3차원 구조 NAND flash memory의 mechanical stress 분포 및 온도 영향성에 관한 연구
남궁연(Yeon Namkoong),양형준(Hyungjun Yang),안준섭(JunSeop An),송윤흡(Yunheub Song) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.6
According to Moor’s law, Scaling of NAND flash memory was continued but nowadays two dimensional structure was reached the physical limit. Consequently three dimensional structure was researched and produced. Mechanical stress occurs reliability problem and change electrical characteristics. Especially in multi-layer structure, mechanical stress is one of the most important factor that determines cell characteristics and reliability. In this paper, we investigate mechanical stress distribution and effect of annealing temperature in 3D NAND flash memory.