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선형접합기를 이용한 Si∥1.3㎛-SiO₂/1.3㎛-SiO₂∥Si SOI 기판의 직접접합
송오성(O. S. Song),이영민(Y. M. Lee),이상현(S. H. Lee),이진우(J. W. Lee),강춘식(C. S. Kang) 한국표면공학회 2001 한국표면공학회지 Vol.34 No.1
10cm-diameter Si (100) ∥ 1.3㎛-SiO₂/1.3㎛-SiO₂∥Si (100) wafers were prepared using a fast linear annealing (FLA) equipment. 1.3㎛-thick SiO₂ films were grown by dry oxidation process. After cleaning and pre mating the wafers in a class 100 clean room, they were heat treated using with the FLA and conventional electric furnace. Bonded area and bond strength of wafer pairs were measured using a infrared (IR) camera and razor blade crack opening method, respectively. It was confinmed that the bonded area by FLA was around 99% and the bond strength value reached 2172mJ/㎡, which is equivalent to theoritical bond strength. Our result implies that thick SiO₂ SOI may be prepared more easily by using SiO₂/SiO₂ bonding interfaces then those of Si/SiO₂'s.