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유연성 유기 박막트랜지스터 적용을 위한 다층 게이트 절연막의 전기적 및 기계적 특성 향상 연구
노화영(H.Y. Noh),설영국(Y.G. Seol),김선일(S.I. Kim),이내응(N-E. Lee) 한국표면공학회 2008 한국표면공학회지 Vol.41 No.1
In this work, improvement of mechanical and electrical properties of gate dielectric layer for flexible organic thin film transistor (OTFT) devices was investigated. In order to increase the mechanical flexibility of PVP (poly(4-vinyl phenol) organic gate dielectric, a very thin inorganic HfO₂ layers with the thickness of 5-20 ㎚ was inserted in between the spin-coated PVP layers. Insertion of the inorganic HfO₂ in the laminated organic/ inorganic structure of PVP/HfO₂/PVP layer led to a dramatic reduction in the leakage current compared to the pure PVP layer. Under repetitive cyclic bending, the leakage current density of the laminated PVP/HfO₂/PVP layer with the thickness of 20-㎚ HfO₂ layer was not changed, while that of the single PVP layer was increased significantly. Mechanical flexibility tests of the OTFT devices by cyclic bending with 5 ㎜ bending radius indicated that the leakage current of the laminated PVP/HfO₂ (20 ㎚)/PVP gate dielectric in the device structure was also much smaller than that of the single PVP layer.
이승찬(S.-C. Lee),이덕규(D.-K. Lee),설영국(Y.-G. Seol),안종현(J.-H. Kim),이내응(N.-E. Lee),김윤제(Y.-J. Kim) 대한기계학회 2009 대한기계학회 춘추학술대회 Vol.2009 No.5
The Organic Thin Film Transistor (OTFT) on flexible substrate electroplated electrodes has many advantages in the fabrication of low cost sensors, e-paper, smart cards, and flexible displays. In this study, we simulated 3-D OTFT with various voltage conditions by using COMSOL commercial package. Analysis model was limited with channel, gate, source and drain for research of thermal distribution. The channel interval is 40 urn and the voltage ranged between -20 and -40V. The OTFT was fabricated using pentacene as a semiconducting layer and electroplated Ni as a gate electrode. Electric properties of fabricated OTFT were characterized by I-V measurements and heat flux was predicted with the result of thermal distribution.