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SiH4-BCl3 혼합가스에서 Plasma CVD로 성장된 boron doped a-Si 로의 특성
성영권,송진수,백우현 한국태양에너지학회 1985 한국태양에너지학회 논문집 Vol.5 No.1
The electrical and optical properties for plasma-enhanced chemically vapor deposited (PCVD) a-Si films from SiH₄ -BCl₃ mixtures have been investigated. It is shown that deposition rate and electrical conductivity are increased, and optical gap is decreased with increasing doping ratio. The result are interpreted in the role of H and Cl atoms incorporated in a-Si network, and there are in evidence that PCVD a-Si films are better than CVD a-Si or post-hydrogenated CVD a-Si films in properties.