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Al-Ti계 산화물 박막의 조성에 따른 선택적 투과 특성
방기수,정소운,임정욱,이승윤,Bang, Ki Su,Jeong, So Un,Lim, Jung Wook,Lee, Seung-Yun 한국진공학회 2013 Applied Science and Convergence Technology Vol.22 No.1
It is expected that progress in building-integrated photovoltaic (BIPV) systems, improving the functionality and design of buildings, will be accelerated in the coming years. While the dye sensitized solar cell is considered one of the most important technologies in the BIPV field, the transparent silicon based thin film solar cell fabricated by thin film processes has drawn attention as a novel alternative. When the selective transmitting layer is applied to the solar cell, the conversion efficiency is improved due to the re-reflection of infrared light into an absorber layer with the transmission of visible light through the solar cell. In this work, we prepared Al-Ti based oxide thin films using cost-effective sputter deposition and examined their selective transmitting characteristics with various compositions. The transmittance and reflectance of the Al-Ti based oxide thin film changed with the variation of its composition, and the selective transmitting property was observed in the sample with the 25 nm-thick AlTiO layer. It is considered that the realization of transparent solar cells and the improvement of their conversion efficiency can be achieved by introducing the Al-Ti based selective transmitting layer. 건물기능과 디자인을 개선하는 건물일체형 태양전지의 발전 가능성이 높게 평가되고 있다. 현재는 투명 염료감응형 태양전지가 유력한 건물일체형 태양전지 기술로서 개발되고 있는데 박막 공정 기술에 기초하는 Si계 투명 박막 태양전지가 새로운 대안으로서 조명받고 있다. Si계 투명 박막 태양전지에 선택적 투과막을 적용하면 가시광선은 태양전지를 투과하고 적외선은 광 흡수층으로 재반사되기 때문에 변환효율이 향상된다. 본 연구에서는 여러 종류의 박막 증착 기술 중에서 경제성이 높은 스퍼터링 방식을 이용하여 Al-Ti계 산화물 박막을 형성하고 조성에 따른 선택적 투과 특성 변화를 관찰하였다. Al-Ti계 산화물 박막의 투과율 및 반사율은 조성에 따라 크게 변화하였으며 25 nm 두께의 AlTiO 박막에서 선택적 투과 특성이 관찰되었다. 이러한 Al-Ti계 산화물 박막의 광학적 특성을 Si계 박막 태양전지에 응용하면 투명 태양전지 구현 및 변환효율 향상이 가능해 지리라 판단된다.
Formation of Threshold Switching Chalcogenide for Phase Change Switch Applications
방기수,이승윤 한국진공학회 2014 Applied Science and Convergence Technology Vol.23 No.1
The programmable switches which control the delivery of electrical signals in programmable logic devices are fabricated using memory technology. Although phase change memory (PCM) technology is one of the most promising candidates for the manufacturing of the programmable switches, the threshold switching material should be added to a PCM cell for realization of the programmable switches based on PCM technology. In this work, we report the impurity-doped Ge2Sb2Te5 (GST) chalcogenide alloy exhibiting threshold switching property. Unlike the GST thin film, the doped GST thin film prepared by the incorporation of In and P into GST is not crystallized even at the postannealing temperature higher than 200oC. This specific crystallization behavior in the doped GST thin film is attributed to the stabilization of the amorphous phase of GST by In and P doping.