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- 저자 : 반한식(H.S. Ban) (검색결과 2 건)
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마이크로 프로세서를 이용한 축전지의 병렬운전 부하분담률 개선에 관한 연구
반한식(H.S. Ban),이정민(J.M. Lee),목형수(H.S. Mok),최규하(G.H. Choe) 전력전자학회 2000 전력전자학술대회 논문집 Vol.2000 No.11
A battery is the device that transforms the chemical energy into the direct-current electrical energy without a mechanical process. Unit cells are connected in series to obtain the required voltage, while being connected in parallel to organize capacity for load current. Because the voltage drop down in one set of battery is faster than in two one, it may result in the low efficiency of power converter with the voltage drop and cause the system shutdown. However, when the system being driven in parallel, a circular-current can be generated. It is shown that, as a result the new batteries are heated by over-charge and over-discharge, and the over charge current increases rust of the positive grid and consequently shortens the lifetime of the new batteries. The difference between the new batteries and old ones is the amount of internal resistance. In this paper, we can detect the unbalance current using the microprocessor and achieve the balance current by adjusting resistance of each set. The internal resistance of each set becomes constant and the current of charge and discharge comes to be balanced by inserting the external resistance into the system and calculating the change of internal resistance.
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MOSFET와 IGBT를 이용한 DC/DC 컨버터의 효율 증대
권형남(H.N. Kwon),전윤석(Y.S. Jeon),반한식(H.S. Ban),최규하(G.H Choe),배영찬(J.H. Bae) 전력전자학회 2001 전력전자학술대회 논문집 Vol.2001 No.7
Recently, the demand of large capacity SMPS for industrial area is increasing. Full-bridge dc-dc converter with IGBT is most widely used for large capacity SMPS because IGBT has a low-conduction loss and large current capacity.<br/> But most large capacity Full-bridge dc-dc converter using IGBT has low operating frequency because of switching loss at IGBT especially at turn-off by current tail and it's cause of relatively big converter size.<br/> MOSFET has low switching losses has been widely used for high frequency SMPS but it has a problem to apply to large capacity SMPS because it has large conduction resistance causing large on-time losses.<br/> In this paper, for reduction losses at switching device, MOSFET is applied at parallel with IGBT in full-bridge dc/dc converter.
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