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MgO 절연막을 갖는 자기 터널 접합구조에서의 급속 열처리 효과
민길준(Kiljoon Min),이경일(Kyungil Lee),김태완(Taewan Kim),장준연(Joonyeon Jang) 한국자기학회 2015 韓國磁氣學會誌 Vol.25 No.2
To achieve a high tunneling magneto resistance (TMR) of sputtered magnetic tunnel junctions (MTJs) with an MgO barrier, the annealing process is indispensable. The structural and compositional changes as consequences of the annealing greatly affect the spin-dependent transport properties of MTJs. Higher TMR could be obtained for MTJs annealed at higher annealing temperature. The diffusion of Ru, Mn and/or Ta in the MTJs may occur during annealing process, which is known to be detrimental to spin-dependent tunneling effect. The rapid thermal annealing (RTA) process was used for annealing the MTJs with synthetic antiferromagnets. To suppress the diffusion of Mn, Ru and/or Ta in the MTJs, the process time and temperature of RTA were minutely controlled.