http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
0.35um BCD 공정을 이용한 700V Double Resurf LDMOS Transistor 구현
문남칠(Nam-Chil Moon),전본근(Bon-Keun Jun),권경욱(Kyung-Wook Kwon),이창준(Chang-Jun Lee),김종민(Jong-Min Kim),김남주(Nam-Joo Kim),유광동(Kwang-Dong Yoo) 대한전자공학회 2010 대한전자공학회 학술대회 Vol.2010 No.6
We have developed nLDMOS with over 800V BV based on 0.35um technology using Double RESURF (REduced SURface Field) technology without extra layers & Epi wafer. This device is applied to power switch and level shifter for HVIC such as LED lighting, motor control IC, etc. Also, this paper presents the optimization condition for wide RESURF region regarding a robust breakdown voltage and low specific on-resistance.